Terahertz broadband near-perfect absorber with a single-layer coating on doped semiconductor

Terahertz broadband near-perfect absorber with a single-layer coating on doped semiconductor

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We demonstrate that a single-layer coating on a doped GaAs or Si substrate enables broadband antireflection and, R231 hence, broadband perfect absorption in the terahertz frequency range.This broadband behavior can be generally expected when the substrate material has a Drude-type dispersion.Our mathematical analyses show that the reflection from Drude-type material may have an anomalously dispersive phase shift.The anomalous dispersion of the reflection phase is used to compensate for the normal dispersion of the accumulation phase in the single-layer coating film.

Consequently, the antireflection conditions are satisfied in a wide frequency range, and broadband antireflection is achieved.Thus, broadband perfect absorption is realized with only a single-layer coating film on the substrate.Our method provides a simple and efficient approach Yerba Mate to achieving broadband perfect absorption, which is critical in many applications such as radar stealth techniques and solar cells.